FDF5680 Datasheet | Fairchild Semiconductor

FDP5680/FDB5680 July 2000 FDP5680/FDB5680 General Description 60V N-Channel Power Trench TM MOSFET Features • 40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at evevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trend technology for extremely low RDS(ON). • 175°C maximum junction temperature rating. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. TO-220 S FDP Series TC = 25°C unless otherwise noted TO-263AB FDB...