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FDF5680 - 60V N-Channel PowerTrench MOSFET

General Description

60V N-Channel PowerTrenchTM MOSFET

Key Features

  • • 40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at evevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trend technology for extremely low RDS(ON). • 175°C maximum junction temperature rating. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP5680/FDB5680 July 2000 FDP5680/FDB5680 General Description 60V N-Channel PowerTrenchTM MOSFET Features • 40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at evevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trend technology for extremely low RDS(ON). • 175°C maximum junction temperature rating. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.