FDFC3N108 Description
This N-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It is bined with a low forward drop Schottky that is isolated from the MOSFET, providing a pact power solution for battery power management and DC/DC converter applications.
FDFC3N108 Key Features
- 3 A, 20 V RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)