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FDFC3N108 - N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode

General Description

This N-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It is combined with a low forward drop Schottky that is isolated from the MOSFET, providing a compact power solution for battery power management and DC/DC converter applications.

Key Features

  • 3 A, 20 V RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).

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Full PDF Text Transcription (Reference)

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FDFC3N108 January 2004 FDFC3N108 N-Channel 1.8V Specified PowerTrench® MOSFET with Schottky Diode General Description This N-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It is combined with a low forward drop Schottky that is isolated from the MOSFET, providing a compact power solution for battery power management and DC/DC converter applications. Features • 3 A, 20 V RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.