FDFC3N108 Datasheet | Fairchild Semiconductor

January 2004 N-Channel 1.8V Specified Power Trench® MOSFET with Schottky Diode General Description This N-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It is bined with a low forward drop Schottky that is isolated from the MOSFET, providing a pact power solution for battery power management and DC/DC converter applications. Features - 3 A, 20 V RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V - Low gate charge - High performance trench technology for extremely low RDS(ON) Applications - Battery management/Charger Application - DC/DC Conversion D2 S1 D1 G2 S2 G1 6 5 4 2 3 Super SOT Pin 1 -6 Super SOT™-6 MOSFET Maximum Ratings Symbol VDSS VGSS ID PD TA=25o C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings 20 ±12 3 12 0.96 0.90...