FDFC2P100 Datasheet | Fairchild Semiconductor

FDFC2P100 Integrated P-Channel Power Trench® MOSFET and Schottky Diode October 2006 Integrated P-Channel Power Trench® MOSFET and Schottky Diode -20V, -3A, 150mΩ Features - Max r DS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A - Max r DS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A - Low Gate Charge (3.4n C typ) - pact industry standard Super SOTTM-6 package General Description The FDFC2P100 bine the exceptional performance of Fairchild's Power Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters. It Features a fast switching, low gate charge MOSFET with very low on-state resistance. Significant improvement of Thermal Characteristics and Power Dissipation via replacement of independently connected Schottky with internal connection of Schottky Diode Cathode pn to P-Channel Power Trench Mos FET Drain pin. Schottky: - VF < 0.45 V at IF = 1A - Ro HS pliant C/D .. 4 5 6 3 2 1 C/D C/D PIN 1 Super SOTTM-6 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Schotty Repetitive Peak Reverse Voltage Schotty Average Forward Current Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) (Note 1a) Ratings -20 ±12 -3 -6 1.5 0.8 20 1 -55 to +150 Units V V A W V A °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 87 166 °C/W Package Marking and Ordering Information Device Marking .100 Device FDFC2P100 Package SSOT-6 Reel Size 7” Tape Width 8mm Quantity 3000units ©2006 Fairchild Semiconductor Corporation FDFC2P100 Rev.C (W) .fairchildsemi. FDFC2P100 Integrated P-Channel Power Trench® MOSFET and Schottky Diode Electrical Characteristics...