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FDFC2P100 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

General Description

The FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.

This device is designed specifically as a single package solution for DC to DC converters.

Key Features

  • Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A.
  • Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A.
  • Low Gate Charge (3.4nC typ).
  • Compact industry standard SuperSOTTM-6 package General.

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Full PDF Text Transcription (Reference)

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FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode October 2006 FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20V, -3A, 150mΩ Features „ Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A „ Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A „ Low Gate Charge (3.4nC typ) „ Compact industry standard SuperSOTTM-6 package General Description The FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance.