FDFMC2P120 Datasheet | Fairchild Semiconductor

Description FDFMC2P120 bines the exceptional performance of Fairchild's Power Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Micro FET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Applications - Buck Boost Features - - 2 A, - 20 V RDS(ON) = 125 mΩ @ VGS = - 4.5 V RDS(ON) = 200 mΩ @ VGS = - 2.5 V - Low Profile - 0.8mm maximum - in the new package Micro FET 3x3 mm PIN 1 TO BOTTOM NC 1 2 6 5 6 TOP S 3 4 G BOTTOM MLP 3x3 Absolute Maximum Ratings Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG TA=25o C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Power Dissipation (Steady State) (Note 1a) Ratings - 20 ±12 - 3.5 - 10 20 2 2.4 1.2 - 55 to...