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FDFMC2P120 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

General Description

FDFMC2P120 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.

This device is designed specifically as a single package solution for Buck Boost.

Key Features

  • a fast switching, low gate charge MOSFET with very low on-state resistance.

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www.DataSheet4U.com FDFMC2P120 July 2005 FDFMC2P120 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description FDFMC2P120 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Applications • Buck Boost Features • –2 A, –20 V RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 200 mΩ @ VGS = –2.5 V • Low Profile – 0.