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FDFMJ2P023Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
August 2007
FDFMJ2P023Z
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
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tm
–20V, –2.9A, 112mΩ
Features MOSFET
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The SC-75 MicroFET package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.
Max rDS(on) = 112mΩ at VGS = –4.5V, ID = –2.9A Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.