Datasheet Summary
December 2001
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
- - 2 A,
- 12 V. RDS(ON) = 110 mΩ @ VGS =
- 4.5 V RDS(ON) = 150 mΩ @ VGS =
- 2.5 V RDS(ON) = 215 mΩ @ VGS =
- 1.8 V
Applications
- Battery management
- Load switch
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC70-6 surface mount package
Pin 1
SC70-6
3...