FDG330P - P-Channel 1.8V Specified PowerTrench MOSFET

Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Features

2 A,.
12 V. RDS(ON) = 110 mΩ @ VGS =.
4.5 V RDS(ON) = 150 mΩ @ VGS =.
2.5 V RDS(ON) = 215 mΩ @ VGS =.
1.8 V.

Fairchild Semiconductor

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Datasheet Details

Part number	FDG330P
Manufacturer	Fairchild Semiconductor
File Size	150.13 KB
Description	P-Channel 1.8V Specified PowerTrench MOSFET
Datasheet	FDG330P Datasheet
Additional preview pages of the FDG330P datasheet.

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Full PDF Text Transcription

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FDG330P December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2 A, –12 V. RDS(ON) = 110 mΩ @ VGS = –4.5 V RDS(ON) = 150 mΩ @ VGS = –2.5 V RDS(ON) = 215 mΩ @ VGS = –1.

Published: Mar 30, 2005 |