Datasheet4U Logo Datasheet4U.com

FDG332PZ Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.

General Description

This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process.

It has been optimized for battery power management applications.

Applications „ Battery management „ Load switch D D S SC70-6 Pin 1 G D D D D G D D S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range

Key Features

  • Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A.
  • Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A.
  • Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A.
  • Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A.
  • Very low level gate drive requirements allowing operation in 1.5V circuits.
  • Very small package outline SC70-6.
  • RoHS Compliant General.

FDG332PZ Distributor & Price

Compare FDG332PZ distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDG330P P-Channel 1.8V Specified PowerTrench MOSFET
FDG311N N-Channel 2.5V Specified PowerTrench MOSFET
FDG312P P-Channel 2.5V Specified PowerTrench MOSFET
FDG313N N-Channel Digital FET
FDG314P Digital FET/ P-Channel
FDG315N N-Channel Logic Level PowerTrench MOSFET
FDG316P P-Channel Logic Level PowerTrench MOSFET
FDG326P P-Channel 1.8V Specified PowerTrench MOSFET
FDG327N 20V N-Channel PowerTrench MOSFET
FDG327NZ MOSFET