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FDG332PZ - MOSFET

Description

This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process.

It has been optimized for battery power management applications.

Battery management Load switch D D S SC70-6 Pin 1 G D D D D G D D S MOSFET Maximum Ratings TA = 25°C unless othe

Features

  • Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A.
  • Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A.
  • Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A.
  • Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A.
  • Very low level gate drive requirements allowing operation in 1.5V circuits.
  • Very small package outline SC70-6.
  • RoHS Compliant General.

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Datasheet preview – FDG332PZ

Datasheet Details

Part number FDG332PZ
Manufacturer Fairchild Semiconductor
File Size 241.13 KB
Description MOSFET
Datasheet download datasheet FDG332PZ Datasheet
Additional preview pages of the FDG332PZ datasheet.

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Full PDF Text Transcription

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FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.6A, 97m: December 2008 tm Features „ Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A „ Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A „ Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A „ Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A „ Very low level gate drive requirements allowing operation in 1.5V circuits „ Very small package outline SC70-6 „ RoHS Compliant General Description This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
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