Datasheet Summary
FDG332PZ P-Channel PowerTrench® MOSFET
P-Channel PowerTrench® MOSFET
-20V, -2.6A, 97m:
December 2008 tm
Features
- Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A
- Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A
- Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A
- Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A
- Very low level gate drive requirements allowing operation in 1.5V circuits
- Very small package outline SC70-6
- RoHS pliant
General Description
This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
Applications
- Battery management
- Load switch
SC70-6
Pin...