FDG361N
FDG361N is N-Channel MOSFET manufactured by Fairchild Semiconductor.
August 2001
N-Channel 100V Specified PowerTrenchMOSFET
General Description
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
- 0.6 A, 100 V.
RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V
- Low gate charge (3.7nC typical)
- Fast switching speed
- High performance...
