FDG361N Datasheet PDF (N-Channel MOSFET) | Download Fairchild Semiconductor FDG361N

FDG361N - N-Channel MOSFET

Description

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V.
Low gate charge (3.7nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).

Datasheet Details

Part number	FDG361N
Manufacturer	Fairchild Semiconductor
File Size	80.83 KB
Description	N-Channel MOSFET
Datasheet	FDG361N Datasheet
Additional preview pages of the FDG361N datasheet.

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Full PDF Text Transcription

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FDG361N August 2001 FDG361N N-Channel 100V Specified PowerTrenchMOSFET General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • 0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V • Low gate charge (3.

Published: Mar 30, 2005 |