FDG410NZ Datasheet | Fairchild Semiconductor

FDG410NZ Single N-Channel Power Trench® MOSFET Single N-Channel Power Trench® MOSFET 20 V, 2.2 A, 70 mΩ March 2009 Features General Description - Max r DS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A - Max r DS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A - Max r DS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A - Max r DS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A - HBM ESD protection level > 2 k V (Note 3) - High performance trench technology for extremely low r DS(on) - High power and current handling capability - Fast switching speed This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low r DS(on) and gate charge (Qg) in a small package. Applications - DC/DC converter - Power management - Load switch - Low gate charge - Ro HS pliant DS D D1 D2 G3 6D 5D 4S SC70-6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source...