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FDG410NZ - N-Channel MOSFET

Description

Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A HBM ESD protection level > 2 kV (Note 3) High perf

Features

  • General.

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Datasheet Details

Part number FDG410NZ
Manufacturer Fairchild Semiconductor
File Size 295.61 KB
Description N-Channel MOSFET
Datasheet download datasheet FDG410NZ Datasheet
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FDG410NZ Single N-Channel PowerTrench® MOSFET FDG410NZ Single N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ March 2009 Features General Description „ Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A „ Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A „ Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A „ Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A „ HBM ESD protection level > 2 kV (Note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Fast switching speed This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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