Datasheet Summary
FDMC6296 N-Channel Power Trench® MOSFET
Single N-Channel Logic-Level Power Trench® MOSFET
30 V, 11.5 A, 10.5 mΩ
Features
- Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 11.5 A
- Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 10 A
- Low Qg, Qgd and Rg for efficient switching performance
- RoHS pliant
November 2010
General Description
This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a “high side” control swtich or “low side” synchronous rectifier.
Application
- Point of Load Converters
-...