FDMC7572S Overview
Max rDS(on) = 3.15 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Advanced Package and Silicon bination for low rDS(on) and high efficiency SyncFET Schottky Body Diode 100% UIL Tested RoHS pliant The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on)...
FDMC7572S Key Features
- Max rDS(on) = 3.15 mΩ at VGS = 10 V, ID = 22.5 A
- Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
- Advanced Package and Silicon bination for low rDS(on)
- SyncFET Schottky Body Diode
- 100% UIL Tested
- RoHS pliant