Max rDS(on) = 3.15 mΩ at VGS = 10 V, ID = 22.5 A
Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
100% UIL Tested
RoHS Compliant
The FD
Full PDF Text Transcription for FDMC7572S (Reference)
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FDMC7572S N-Channel Power Trench® SyncFETTM August 2011 FDMC7572S N-Channel Power Trench® SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description Max rDS(on) = 3.15 ...
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25 V, 40 A, 3.15 mΩ Features General Description Max rDS(on) = 3.15 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode 100% UIL Tested RoHS Compliant The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMC7572S Datasheet
