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FDMC7582 - MOSFET

General Description

Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 16.7 A Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A State-of-the-art switching performance Lower output capacitance, gate resistance, and gate charge boost efficiency Shielded gate technology reduces swit

Key Features

  • General.

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Full PDF Text Transcription for FDMC7582 (Reference)

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FDMC7582 N-Channel PowerTrench® MOSFET FDMC7582 N-Channel PowerTrench® MOSFET 25 V, 49 A, 5.0 mΩ April 2012 Features General Description „ Max rDS(on) = 5.0 mΩ at VGS = 1...

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il 2012 Features General Description „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 16.7 A „ Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A „ State-of-the-art switching performance „ Lower output capacitance, gate resistance, and gate charge boost efficiency „ Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.