Datasheet4U Logo Datasheet4U.com

FDMC8026S Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMC8026S N-Channel PowerTrench® SyncFETTM FDMC8026S N-Channel PowerTrench® SyncFETTM 30 V, 21 A, 4.

General Description

„ Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A „ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A „ Advanced package and silicon bination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS pliant The FDMC8026S has been designed to minimize losses in power conversion application.

Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.

Applications „ Synchronous Rectifier for DC/DC Converters „ Notebook Vcore/GPU low side switch „ Networking Point of Load low side switch „ Tele secondary side rectification Top Bottom Pin 1 S D SS S G S D S D D D G D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25°C TA = 25°C Single Pulse Avalance Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 21 19 100 66 36 2.4 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 3.4 (Note 1a) 53 °C/W Device Marking FDMC8026S Device FDMC8026S Package MLP 3.3X3.3 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2013 Fairchild Semiconductor Corporation 1 FDMC8026S Rev.C7 .fairchildsemi.

Key Features

  • General.

FDMC8026S Distributor