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FDMC8026S - N-Channel MOSFET

Datasheet Summary

Description

Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tes

Features

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Datasheet Details

Part number FDMC8026S
Manufacturer Fairchild Semiconductor
File Size 312.72 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8026S Datasheet
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FDMC8026S N-Channel PowerTrench® SyncFETTM FDMC8026S N-Channel PowerTrench® SyncFETTM 30 V, 21 A, 4.4 mΩ June 2014 Features General Description „ Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A „ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A „ Advanced package and silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMC8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.
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