FDMC8676 Datasheet | Fairchild Semiconductor

FDMC8676 N-Channel PowerTrench® MOSFET December 2007 N-Channel PowerTrench MOSFET 30V, 18A, 5.9mΩ Features - Max rDS(on) = 5.9mΩ at VGS = 10V, ID = 14.7A - Max rDS(on) = 9.3mΩ at VGS = 4.5V, ID = 11.5A - Low Profile - 1mm max in Power 33 - RoHS pliant ® tm General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various ponents of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been...