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FDMC8678S - N-Channel Power Trench MOSFET

General Description

The FDMC8678S has been designed to minimize losses in power conversion applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Key Features

  • Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A.
  • Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • SyncFET Schottky Body Diode.
  • MSL1 robust package design.
  • RoHS Compliant ® SyncFET TM General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC8678S N-Channel Power Trench® SyncFETTM July 2009 FDMC8678S N-Channel Power Trench 30V, 18A, 5.2mΩ Features „ Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ RoHS Compliant ® SyncFET TM General Description tm The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.