FDMC8678S Overview
tm The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMC8678S Key Features
- Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A
- Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- SyncFET Schottky Body Diode
- MSL1 robust package design
- RoHS pliant