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FDS5170N7 - 60V N-Channel PowerTrench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features

  • 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 6.0 V.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.
  • Fast switching, low gate charge (51nC typical).
  • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side 5 Drain Contact 6 7 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Sou.

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Datasheet Details

Part number FDS5170N7
Manufacturer Fairchild Semiconductor
File Size 195.43 KB
Description 60V N-Channel PowerTrench MOSFET
Datasheet download datasheet FDS5170N7 Datasheet
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Full PDF Text Transcription

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FDS5170N7 May 2003 FDS5170N7 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Applications • Synchronous rectifier • DC/DC converter Features • 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 6.
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