Datasheet Details
| Part number | FDS5351 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 242.71 KB |
| Description | MOSFET |
| Download | FDS5351 Download (PDF) |
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Overview: FDS5351 N-Channel PowerTrench® MOSFET April 2008 FDS5351 N-Channel PowerTrench® MOSFET 60V, 6.
| Part number | FDS5351 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 242.71 KB |
| Description | MOSFET |
| Download | FDS5351 Download (PDF) |
|
|
|
Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A High performance trench technology for extremely low rDS(on) 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
RoHS Compliant Application Inverter Switch Synchronous Rectifier Load Switch D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25°C Power Dissipation TA = 25°C Operating and Storage Jun
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