FDS5351 Description
Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A High performance trench technology for extremely low rDS(on) 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDS5351 Key Features
- Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A
- Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A
- High performance trench technology for extremely low rDS(on)
- 100% UIL Tested
- RoHS pliant
- Inverter Switch
- Synchronous Rectifier
- Load Switch
- Pulsed