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FDS5351 - MOSFET

Datasheet Summary

Description

Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A High performance trench technology for extremely low rDS(on) 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® proce

Features

  • General.

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Datasheet Details

Part number FDS5351
Manufacturer Fairchild Semiconductor
File Size 242.71 KB
Description MOSFET
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FDS5351 N-Channel PowerTrench® MOSFET April 2008 FDS5351 N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ Features General Description „ Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A „ Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
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