FDS8690 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Features - Max r DS(on) = 7.6mΩ, VGS = 10V, ID = 14A - Max r DS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A - High performance trench technology for extremely low r DS(on) and fast switching - Very low gate charge - High power and current handling capability - 100% RG tested - Ro HS pliant REE I DF Applications - Notebook CPU power supply - Synchronous rectifier M ENTATIO LE N MP .. Absolute Maximum Ratings TA = 25°C unless otherwise Noted Symbol VDS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Temperature (Note 1a) Ratings 30 ±20 14 100 210 2.5 1.2 1.0 -55 to +150 °C W Units V V A m J Thermal Characteristics RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS8690 Device FDS8690 Reel Size 13” Tape Width 12mm Quantity 2500 units .fairchildsemi. ©2006 Fairchild Semiconductor Corporation FDS8690 Rev. B FDS8690 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V 30 34.3 1 ±100 V m V/°C µA n A On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ r DS(ON) Gate to Source Threshold Voltage Gate to Source Threshold Voltage...