FDY4001CZ - Complementary N & P-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDY4001CZ
Manufacturer	Fairchild Semiconductor
File Size	391.97 KB
Description	Complementary N & P-Channel PowerTrench MOSFET
Datasheet	FDY4001CZ Datasheet
Additional preview pages of the FDY4001CZ datasheet.

Product details

Description

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V.

Level shifting Power Supply Converter Circuits Load/Power Swit

Features

Q1: N-Channel.
Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA.
Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA.
Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel tm General.

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Published: May 4, 2007 |