FDB0260N1007L Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications. Applications Industrial Motor Drive Industrial Power Supply Industrial Automation Battery Operated tools Battery Protection Solar Inverters UPS and...
FDB0260N1007L Key Features
- Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant