FDC8878 Description
Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.
FDC8878 Key Features
- Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A
- Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A
- High performance trench technology for extremely low rDS(on)
- Fast switching speed
- RoHS pliant