FDD86252 Description
Shielded Gate MOSFET Technology Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A 100% UIL tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
FDD86252 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A
- Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A
- 100% UIL tested
- RoHS pliant
- DC Conversion
- 55 to +150