FDFME3N311ZT Description
Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated pounds and antimony oxides HBM ESD protection level > 1600 V (Note 3) RoHS pliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable...
FDFME3N311ZT Key Features
- Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A
- Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A
- Low profile: 0.55 mm maximum in the new package
- Free from halogenated pounds and antimony oxides
- HBM ESD protection level > 1600 V (Note 3)
- RoHS pliant