FDG311N Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
FDG311N Key Features
- Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). pact industry standard SC70