FDG330P Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
FDG330P Key Features
- 2 A, -12 V. RDS(ON) = 110 mΩ @ VGS = -4.5 V RDS(ON) = 150 mΩ @ VGS = -2.5 V RDS(ON) = 215 mΩ @ VGS = -1.8 V