FDG332PZ Description
This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications. Applications Battery management Load switch D D S SC70-6 Pin 1 G D D D D G D D S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power...
FDG332PZ Key Features
- Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A
- Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A
- Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A
- Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A
- Very low level gate drive requirements allowing operation
- Very small package outline SC70-6
- RoHS pliant