FDMC7582 Description
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 16.7 A Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A State-of-the-art switching performance Lower output capacitance, gate resistance, and gate charge boost efficiency Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to...
FDMC7582 Key Features
- Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 16.7 A
- Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A
- State-of-the-art switching performance
- Lower output capacitance, gate resistance, and gate charge boost efficiency
- Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
- High side switching for high end puting
- Clip bonding technology further reduces On resistance and source inductance
- RoHS pliant
- High power density DC-DC sy