FDMC86106LZ Description
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
FDMC86106LZ Key Features
- Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
- HBM ESD protection level > 3 KV typical (Note 4)
- 100% UIL Tested
- RoHS pliant
- DC Conversion