FDMS8026S Description
Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 19 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Advanced package and Silicon bination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS pliant The FDMS8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined...
FDMS8026S Key Features
- Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 19 A
- Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
- Advanced package and Silicon bination for low rDS(on)
- SyncFET Schottky Body Diode
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant