FDS4897AC Description
N-Channel Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A Q2: P-Channel Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A 100% UIL Tested RoHS pliant These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state...
FDS4897AC Key Features
- Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A
- Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A
- Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A
- Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A
- 100% UIL Tested
- RoHS pliant