FDS8690 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
FDS8690 Key Features
- Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A
- Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A
- High performance trench technology for extremely low rDS(on) and fast switching
- Very low gate charge
- High power and current handling capability
- 100% RG tested
- RoHS pliant