FDS8812NZ Description
Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A HBM ESD protection level of 6.4KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state...
FDS8812NZ Key Features
- Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A
- Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A
- HBM ESD protection level of 6.4KV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS pliant