LP750 - 0.5 W POWER PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LP750
Manufacturer	Filtronic Compound Semiconductors
File Size	34.36 KB
Description	0.5 W POWER PHEMT
Datasheet	LP750 Datasheet
Additional preview pages of the LP750 datasheet.

Product details

Description

AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 750 µm Schottky barrier gate.

Features

S.
28 dBm Output Power at 1-dB Compression at 18 GHz.
10 dB Power Gain at 18 GHz.
24 dBm Output Power at 1-dB Compression at 3.3V.
55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) GATE BOND PAD LP750.

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Other Datasheets by Filtronic Compound Semiconductors

LP750P100 - PACKAGED 0.5 WATT POWER PHEMT
LP750SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
LP7512 - ULTRA LOW NOISE PHEMT
LP7512P70 - PACKAGED ULTRA LOW NOISE PHEMT
LP7612 - HIGH DYNAMIC RANGE PHEMT
LP7612P70 - PACKAGED HIGH DYNAMIC RANGE PHEMT

Published: Mar 22, 2005 |