LP750 Overview
AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 750 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power...
LP750 Key Features
- 28 dBm Output Power at 1-dB pression at 18 GHz
- 10 dB Power Gain at 18 GHz
- 24 dBm Output Power at 1-dB pression at 3.3V
- 55% Power-Added Efficiency
- DESCRIPTION AND