LP750SOT89 Datasheet PDF - Filtronic Compound Semiconductors LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT Specs

LP750SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Datasheet Summary

Description

AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography.

Features

S.
26 dBm Output Power at 1-dB Compression at 1.8 GHz.
17 dB Power Gain at 1.8 GHz.
0.7 dB Noise Figure.
40 dBm Output IP3 at 1.8 GHz.
55% Power-Added Efficiency.

Datasheet Details

Part number	LP750SOT89
Manufacturer	Filtronic Compound Semiconductors
File Size	43.90 KB
Description	LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Datasheet	LP750SOT89 Datasheet
Additional preview pages of the LP750SOT89 datasheet.

📁 Similar Datasheet

LP7510 - PC Power Supply Supervisors (ETC)

LP75103122F - Lithium Iron Phosphate Battery (EEMB)

LP7568130F - Lithium Iron Phosphate Battery (EEMB)

LP75W-108 - LED Optimized Drivers (EPtronics)

LP75W-108-C0700 - LED Optimized Drivers (EPtronics)

LP75W-12 - LED Optimized Drivers (EPtronics)

LP75W-12-C6250 - LED Optimized Drivers (EPtronics)

LP75W-15 - LED Optimized Drivers (EPtronics)

LP75W-15-C5000 - LED Optimized Drivers (EPtronics)

LP75W-166 - LED Optimized Drivers (EPtronics)

Full PDF Text Transcription

Click to expand full text

LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 26 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 0.7 dB Noise Figure ♦ 40 dBm Output IP3 at 1.8 GHz ♦ 55% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP750 also features Si3N4 passivation and is available in die form or in other packages.

Published: Mar 22, 2005 |