Datasheet Details
| Part number | LP7512P70 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 59.88 KB |
| Description | PACKAGED ULTRA LOW NOISE PHEMT |
| Datasheet |
 LP7512P70 Datasheet
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General Description
AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate.
Key Features
- S.
- 0.7 dB Noise Figure at 12 GHz.
- 12 dB Associated Gain at 12 GHz.
- 0.4 dB Noise Figure at 2 GHz.
- 18 dB Associated Gain at 2 GHz.
- Low DC Power Consumption: 30mW LP7512P70.