LP7512P70 Overview
AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for...
LP7512P70 Key Features
- 0.7 dB Noise Figure at 12 GHz
- 12 dB Associated Gain at 12 GHz
- 0.4 dB Noise Figure at 2 GHz
- 18 dB Associated Gain at 2 GHz
- Low DC Power Consumption: 30mW
- DESCRIPTION AND