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LP750P100 Datasheet

Packaged 0.5 Watt Power Phemt

Manufacturer: Filtronic Compound Semiconductors

LP750P100 Overview

AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable...

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