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LP750P100 - PACKAGED 0.5 WATT POWER PHEMT

Datasheet Summary

Description

AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m Schottky barrier gate.

Features

  • S.
  • 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency.

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Datasheet preview – LP750P100

Datasheet Details

Part number LP750P100
Manufacturer Filtronic Compound Semiconductors
File Size 49.27 KB
Description PACKAGED 0.5 WATT POWER PHEMT
Datasheet download datasheet LP750P100 Datasheet
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Full PDF Text Transcription

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LP750P100 PACKAGED 0.5 WATT POWER PHEMT • FEATURES ♦ ♦ ♦ ♦ ♦ • 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power/low-noise applications. The LP750 also features Si3 N4 passivation and is available in die form or in surface-mount packages.
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