Datasheet Details
| Part number | LP750P100 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 49.27 KB |
| Description | PACKAGED 0.5 WATT POWER PHEMT |
| Datasheet |
 LP750P100 Datasheet
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General Description
AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m Schottky barrier gate.
Key Features
- S.
- 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency.