LP7512 Datasheet PDF - Filtronic Compound Semiconductors ULTRA LOW NOISE PHEMT Specs

LP7512 - ULTRA LOW NOISE PHEMT

Datasheet Summary

Description

AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate.

Features

S.
0.6 dB Noise Figure at 12 GHz.
12 dB Associated Gain at 12 GHz.
Low DC Power Consumption.
Excellent Phase Noise DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7512 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE.

Datasheet Details

Part number	LP7512
Manufacturer	Filtronic Compound Semiconductors
File Size	36.64 KB
Description	ULTRA LOW NOISE PHEMT
Datasheet	LP7512 Datasheet
Additional preview pages of the LP7512 datasheet.

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Full PDF Text Transcription

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ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7512 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) • DESCRIPTION AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for ultra low noise and usable gain to 40 GHz.

Published: Mar 22, 2005 |