LP7512 Overview
AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for ultra low noise and...
LP7512 Key Features
- 0.6 dB Noise Figure at 12 GHz
- 12 dB Associated Gain at 12 GHz
- Low DC Power Consumption
- Excellent Phase Noise
- DESCRIPTION AND