MRF6P9220HR3
MRF6P9220HR3 is RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Device Designed for Push
- Pull Operation Only
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Lower Thermal Resistance Package
- Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
- Low Gold Plating Thickness on Leads, 40μ″ Nominal.
- Ro HS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 47 W AVG., 28 V SINGLE N
- CDMA LATERAL N
- CHANNEL RF POWER MOSFET
CASE 375G
- 04, STYLE 1 NI
- 860C3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value
- 0.5, +68
- 0.5, +12 700 4
- 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 220 W CW Case Temperature 76°C, 47 W CW Symbol RθJC Value(1,2) 0.25 0.28 Unit °C/W
1. MTTF calculator available at http://.freescale./rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes
- AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6P9220HR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22
- A114) Machine Model (per EIA/JESD22
- A115) Charge Device Model (per JESD22
- C101) Class 3B (Minimum) C (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IDSS IDSS...
