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MRF6V4300NBR1 - RF Power Field Effect Transistors

General Description

Part Number B1 Short Ferrite Bead 2743019447 B2, B3 Long Ferrite Beads 2743021447 C1 47 μF, 25 V, Tantalum Capacitor T491B476M025AT C2, C3 22 μF, 50 V, Chip Capacitors C5750JF1H226ZT C4, C5, C6, C7 1 μF, 100 V, Chip Capacitors C3225JB2A105KT C8, C9, C10 15 nF, 100 V, Chip Capacitors

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V4300N Rev. 3, 4/2010 MRF6V4300NR1 MRF6V4300NBR1 10--600 MHz, 300 W, 50 V LATER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.