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MRF6V4300NR1 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF6V4300NR1 datasheet PDF. This datasheet also includes the MRF6V4300NBR1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF6V4300NBR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz.

Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V4300N Rev. 3, 4/2010 MRF6V4300NR1 MRF6V4300NBR1 10--600 MHz, 300 W, 50 V LATER.

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