Datasheet4U Logo Datasheet4U.com

MB82B001 - 1M-BIT HIGH-SPEED BiCMOS SRAM

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MB82 8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts Micro Commercial Components
MB82D01171A 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory Fujitsu Media Devices
MB82DBS04163C MEMORY Mobile FCRAMTM CMOS 64 M Bit Fujitsu Media Devices
MB82DP02183C-65L Mobile Phone Application Specific Memory Fujitsu Media Devices
MB82DP02183D 32M Bit (2 M word X 16 bit) Mobile Phone Application Specific Memory Fujitsu Media Devices

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB82B005 1M-BIT HIGH-SPEED BiCMOS SRAM
MB82B006 1M-BIT HIGH-SPEED BiCMOS SRAM
MB82B78 64K-BIT HIGH-SPEED BiCMOS SRAM
MB82B79 72K-BIT HIGH-SPEED BiCMOS SRAM
MB82B81 256K-BIT HIGH-SPEED BiCMOS SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
September 1990 Edition 2.0 DATA SHEET MB82B001-251-35 1M-BIT HIGH-SPEED BiGMOS SRAM OJ FUJITSU 1M Words x 1 Bit High-Speed BiCMOS Static Random Access Memory The Fujitsu MB82BOO1 is a 1,048,576 words x 1 bit static random access memory fabricated with a BiCMOS process technology. For lower power dissipation and higher speed, peripheral circuits are fabricated with BiCMOS technology. To obtain a smaller chip size, cells use NMOS transistors and resislOrs. The memory uses asynchronous circuitry and may be maintained in any state for an indefinite period of time. All pins are TTL compatible and a single +5 V power supply is required.