MB82B001 Datasheet | Fujitsu Semiconductor Limited

September 1990 Edition 2.0 DATA SHEET MB82B001-251-35 1M-BIT HIGH-SPEED Bi GMOS SRAM FUJITSU 1M Words x 1 Bit High-Speed Bi CMOS Static Random Access Memory The Fujitsu MB82BOO1 is a 1,048,576 words x 1 bit static random access memory fabricated with a Bi CMOS process technology. For lower power dissipation and higher speed, peripheral circuits are fabricated with Bi CMOS technology. To obtain a smaller chip size, cells use NMOS transistors and resisl Ors. The memory uses asynchronous circuitry and may be maintained in any state for an indefinite period of time. All pins are TTL patible and a single +5 V power supply is required. The MB82B001 has low power dissipation, low cost, and high performance, and it is ideally suited for use in microprocessor systems and other applications where fast access time and ease of use are required. - Organization: 1,048,576 words x 1 bit - Static operation: no clock or refresh required - Access time: 25 ns max. (MB82BOOl-25) 35 ns max. (MB82BOOl-35) - Single +5 V power supply ±1 0% tolerance 120 rn A max. (Active operation) 5 m A max. (Standby, CMOS level) 25 m A max. (Standby, TTL level) - Separate data inputs and outputs - TTL patible inputs and outputs - Chip select for simplified memory expansion, automatic power down - Electrostatic protection for all inputs and outputs - 28-pin Plastic Package: SOJ (400 mil) MB82BOO1-xx PJ Absolute Maximum Ratings (See Note) Rating Symbol Value Unit Supply Voltage Input Vo~e on any pin with respect to ND Output vo~~r on any pin with respect to G D Vex; -0.510 +7.0 -3.510+7.0 Vwr -0.510+7.0 Output Current l OUT ±20 m...