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MB82B81 - 256K-BIT HIGH-SPEED BiCMOS SRAM

General Description

0,.

Pin Name Address input.

Dete input.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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September 1990 Edition 1.0 DATA SHEET 00 FUJITSU M882881-151-20 256K-BIT HIGH-SPEED BiGMOS SRAM 256K Words x 1 Bit BICMOS High-Speed Static Random Access Memory The Fujitsu MB82B81 is a static random access memory organized as 262.144 words x 1 bit and fabricated with a CMOS silicon gate process. BiCMOS technology is used in the peripheral circuits to provide lower power dissipation and higher speed. The MB82B81 is housed in a300 mil plastic DIPorsmall outlineJ-lead (SOJ) package. The memory uses asynchronous circuitry and requires a +5 V power supply. All pins are m compatible. The MB82B81 has low power dissipation. low cost. and high performance. and it is ideally suited for use in microprocessor systems and other applications where fast access time and ease of use are required.