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MB82B81 Datasheet PDF

Fujitsu MB82B81

MB82B81 is a static random access memory organized as 262.144 words x 1 bit and fabricated with a CMOS silicon gate process. The MB82B81 is housed in a300 mil plastic DIPorsmall outlineJ-lead (SOJ) package. The memory uses asynchronous circuitry and requires a +5 V power supply.
Part No. MB82B81
Datasheet MB82B81 Download
Manufacturer
Fujitsu
Description 256K-BIT HIGH-SPEED BiCMOS SRAM
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MB82B81 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(See Note) Rating Supply Voltage Input Volta&e on any pin with respect to NO Output vo~a2e on any pin with respect to G 0 Output Current Power Dissipation Temperature Under Bias Symbol Value Unit Vee -0.5 to +7 V V.. -0.5 to +7 V VIIO -0.5 to +7 V lOUT ±20 mA PD 1.0 W TBIAS -10 to +85 °C Storage Temperature Range TSTG -45 to +125 °C Nota: Permanent device damage may ocoor Habsolute maximum I"Blings are exceeded. Functional operation should be resbicled to the conditions as detailed in the operation sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliabUity. COpyrIght © 1990 by FUJITSU LIMITED IIId F"1IIu M_"",IcI.Inc. Plastic Package (DIP-28P-M04) Plastic Package (LCC-28P-M04) Pin Assignment (TOP VIEW) At v.. A, A, A. A, II,; A" A, A" A" A" A" A" A" A" WE 0", GND Ci til, Thla device contains clrcuhry to protect inputs against :=~~;~:'~~===~~f~:Jd=:i~ d any YOItage higher thM maximum rated voltages to this high Irrpedanc:a circuit 2-49 MB82B81-15 MB82B81-20 Fig.
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