MB82B84 Datasheet | Fujitsu Semiconductor Limited

July 1990 Edition 1.0 DATA SHEET c P FUJITSU MB82B84-151-20 GMOS 256K-BIT HIGH-SPEED Bi GMOS SRAM 64K Words x 4 Bits Bi CMOS High-Speed Static Random Access Memory with Automatic Power Down The Fujitsu MB82B84 is a 65,536 words x 4 bits static random access memory fabricated with a CMOS silicon gate process. For lower power dissipation and higher speed, peripheral circuits use Bi CMOS technology. To obtain a smaller chip size, cells use NMOS transistors and resistors. The MB82B84 is housed in 300 mil plastic DIP and small outline J-Iead (SOJ) packages. The memory uses asynchronous circuitry and requires a +5 V power supply. All pins are TTL patible. The MB82B84 has low power dissipation, low cost, and high performance, and it is ideally suited for use in microprocessor systems and other applications where fast access time and ease of use are required. - Organization: 65,536 words x 4 bits - Access time: 1M a l ACS - 15 ns max. (MB82B84-15) t M - t ACS - 20 ns max. (MB82B84-20) - Bi CMOS peripheral circuits - TTL patible inputs and outputs - Static operation: no clock required - Three-state outputs - mon data inputs and outputs - Single +5 V power supply ±1 0% tolerance with low current drain: 120 m A max. (Active operation) 15 m A max. (Standby, CMOS level) 25 m A max. (Standby, TTL level) - Standard 24-pin Plastic Package: Skinny DIP (300 mil) MB82B84-xx PSK MB82B84-xx PJ - Pin patible with MB81 C84A Absolute Maximum Ratings (See Note) Rating Symbol Value Unit Supply Voltage Input Volt~e on any pin with respect to NO Output Volt~e on any 110 pin with respect to G 0 Vee ~.5to+7.0...