MB82B84 Datasheet PDF

Fujitsu MB82B84

MB82B84 is a 65,536 words x 4 bits static random access memory fabricated with a CMOS silicon gate process. For lower power dissipation and higher speed, peripheral circuits use BiCMOS technology. The MB82B84 is housed in 300 mil plastic DIP and small outline J-Iead (SOJ) packages.

Part No.	MB82B84
Datasheet	MB82B84 Download
Manufacturer	Fujitsu
Description	CMOS 256K-BIT HIGH-SPEED BiCMOS SRAM
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ABSOLUTE MAXIMUM RATINGS

(See Note) Rating Symbol Value Unit Supply Voltage Input Volt~e on any pin with respect to NO Output Volt~e on any 110 pin with respect to G 0 Vee ~.5to+7.0 V VN -3.5 to +7.0 V V'IO ~.5to+7.0 V Output Current lOUT ±20 mA Power Dissipation Po 1.0 W Temperature Under Bias TslAS -10 to +85 °C Storage Temperature Range TSTG -40 to +125 °C Note: Pennanent device damage may occur if absolute maximum ratings are exceeded. Functional operation should be restricted to the conditions as detailed in the operation sections of this deta sheet Exposure to absolute maximum rating conditions lor ex- tended periods may affect device reliability. PLASTIC PACKAGE DIP●24P●M03 PLASTIC PACKAGE LCC●24P●M02 PIN ASSIGNMENT (TOP VIEW) A. Vee A. A, A. Ao A. A,. A. A,. A, A14 A. A.. A. 1/0. A,. 1/0. A" VO. CS 1/0, GND WE (DIP & SOJ Package) T h l l _ contains clrQJItry to prot8d"'.lnputs against . - . - duo to high stallcvoltagos o'.I....1c fields. However. h II adviIed that normal precaajions be taken to avoid appUcation 01 any WJItago higher th.. maximum _ vohagos 10 this high IqIocfanoo clraJlt.