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MB82B006 - 1M-BIT HIGH-SPEED BiCMOS SRAM

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September 1990 Edition 1.0 DATA SHEET MB82B006-251-35 1MBIT HIGH-SPEED BiGMOS SRAM cP FUJITSU 256K Words x 4 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B006 is astatic random access memoryorganizedas262,144words by 4 bits and fabricated with BiCMOS process technology. BiCMOStechnology is used in the peripheral circuits to provide lower power dissipation and higher speed. To obtain a smaller chip size, the cells use NMOS transistors and resistors. The memory uses asynchronous circuitry and may be maintained in any state for an indefinite period of time. All pins are TIl. compatible and a single +5 V power supply is required. The MB82B006 is housed in a 400 mil plastic small outline J-Iead (SOJ) package.