MB82B006 Datasheet | Fujitsu Semiconductor Limited

September 1990 Edition 1.0 DATA SHEET MB82B006-251-35 1MBIT HIGH-SPEED Bi GMOS SRAM c P FUJITSU 256K Words x 4 Bits Bi CMOS High-Speed Static Random Access Memory The Fujitsu MB82B006 is astatic random access memoryorganizedas262,144words by 4 bits and fabricated with Bi CMOS process technology. Bi CMOStechnology is used in the peripheral circuits to provide lower power dissipation and higher speed. To obtain a smaller chip size, the cells use NMOS transistors and resistors. The memory uses asynchronous circuitry and may be maintained in any state for an indefinite period of time. All pins are TIl. patible and a single +5 V power supply is required. The MB82B006 is housed in a 400 mil plastic small outline J-Iead (SOJ) package. The MB82B006 has low power dissipation, low cost, and high performance, and it is ideally suited for use in microprocessor systems and other applications where fast access time and ease of use are required. - Organization: 262,144 words x 4 bits - Static operation: no clocks or refresh required - Access time: 25 ns max. (MB82B006-25) 35 ns max. (MB82B006-35) - Single +5 V power supply ±1 0% tolerance with low current drain: 120 m A max. (Active Operation) 15 m A max. (CMOS Standby) 25 m A max. (TTl Standby) - Separate data inputs and outputs - TTL patible inputs and outputs - Chip select for simplified memory expansion, automatic power drain - Electrostatic protection for all inputs and outputs - Standard 32-pin Plastic Package: SOJ (400 mil) MB82B006-xx PJ Absolute Maximum Ratings (See Note) Rating Symbol Value Unit Supply Voltage Vee -0.5 to +7 Input Volta&e on any pin with respect to NO Output VOII~e on any pin with respect to G 0 Vt I -0.5 to +7 VOUT -0.5 to +7 Output Current Power Dissipation lou T ±20 m...