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MB82B005 - 1M-BIT HIGH-SPEED BiCMOS SRAM

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September 1990 Edition 2.0 DATA SHEET MB82B005-251-35 1M-BIT HIGH-SPEED BiGMOS SRAM cP FUJITSU 256K Words x 4 Bits High-Speed BiCMOS Static Random Access Memory The Fujitsu MB82B005 is a 262,144 words x 4 bits static random access memory fabricated with a BiCMaS process technology. For lower power dissipation and higher speed, peripheral circuits use BiCMOS technology. To obtain a smaller chip size, cells use NMOS transistors and resistors. The memory uses asynchronous circuitry and may be maintained in any state for an indefinite period of time. All pins are TTl. compatible and a single +5 V power supply is required. The MB82B005 is housed in a 400 mil plastic small outline J-Iead (SOJ) package.