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MB82B005 Datasheet PDF

Fujitsu MB82B005

MB82B005 is a 262,144 words x 4 bits static random access memory fabricated with a BiCMaS process technology. For lower power dissipation and higher speed, peripheral circuits use BiCMOS technology. The memory uses asynchronous circuitry and may be maintained in any state for an indefinite period of time.
Part No. MB82B005
Datasheet MB82B005 Download
Manufacturer
Fujitsu
Description 1M-BIT HIGH-SPEED BiCMOS SRAM
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MB82B005 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(See Note) Rating Symbol Value UnH Supply Voltage Vee -0.510+7.0 V Input Voltaae on any pin with respect to ND Vt/ -3.510 +7.0 V Output volt~e on any 110 pin with respect to G D VOUT -0.510+7.0 V Output Current Power Dissipation Temperature Under Bias louT ±20 mA PD 1.0 W TslAS -1010+85 °C Storage Temperature Range TSTG -40 to +125 °C Note: Pennanent device damage may occur if absolute maximum ratings 818 exceeded. Functional operation should be resbiclBd 10 the oondilions as detailed in the openlIion sections 01 this daIS sheal Expoaure to absolulS maximum rating conditions for exlendad periods may affect device reliability. PLASTIC PACKAGE LCC-28P-M05 PIN ASSIGNMENT A.S Vee A.7 A'5 AD A1. A. A.3 A2 A'2 A3 AU M A.O AS Ai A7 NC AS 1101 A5 1102 Os 1103 OE 1104 GND-,.;.;:...-_ _....r WE .. _ r.● ~ _ _III clrcun'Yto p!\lI8Ct1he Inpu1I aga/naI _ _ _duotoligh_~or. i181N1oed """ _ powc:aIflonI be ........ avdd appIcalian "'..., . . . . . hlg'*.hM maxI...m_~ thll high ~clrcult.
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