MB82B005 Datasheet | Fujitsu Semiconductor Limited

September 1990 Edition 2.0 DATA SHEET MB82B005-251-35 1M-BIT HIGH-SPEED Bi GMOS SRAM c P FUJITSU 256K Words x 4 Bits High-Speed Bi CMOS Static Random Access Memory The Fujitsu MB82B005 is a 262,144 words x 4 bits static random access memory fabricated with a Bi CMa S process technology. For lower power dissipation and higher speed, peripheral circuits use Bi CMOS technology. To obtain a smaller chip size, cells use NMOS transistors and resistors. The memory uses asynchronous circuitry and may be maintained in any state for an indefinite period of time. All pins are TTl. patible and a single +5 V power supply is required. The MB82B005 is housed in a 400 mil plastic small outline J-Iead (SOJ) package. The MB82B005 has low power dissipation, low cost, and high performance, and it is ideally suited for use in microprocessor systems and other applications where fast access time and ease of use are required. - Organization: 262,144 words x 4 bit - Static operation: no clock or refresh required - Access time: 25 ns max. (MB82B005-25) 35 ns max. (MB82BOOS-35) - Single +5 V power supply ±1 0% tolerance with low current drain: 120 m A max. (Active operation) 15 m A max. (Standby, CMOS level) 25 m A max. (Standby, TTl. level) - mon data inputs and outputs - TTl. patible inputs and outputs - Chip select for simplified memory expansion, automatic power down - Electrostatic protection for all inputs and outputs - 28-pin Plastic Package: SOJ (400 mil) MB82B005-xx PJ Absolute Maximum Ratings (See Note) Rating Symbol Value Un H Supply Voltage Vee -0.510+7.0 Input Voltaae on any pin with respect to ND Vt/ -3.510 +7.0 Output volt~e on any 110 pin with respect to G D VOUT -0.510+7.0 Output Current Power Dissipation Temperature Under Bias lou T ±20 m...