| Part number | MB82B005 |
|---|---|
| Datasheet | MB82B005-Fujitsu.pdf |
| File Size | 373.87 KB |
| Manufacturer | Fujitsu Semiconductor Limited |
| Description | 1M-BIT HIGH-SPEED BiCMOS SRAM |
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For lower power dissipation and higher speed, peripheral circuits use BiCMOS technology. To obtain a smaller chip size, cells use NMOS transistors and resistors. The memory uses asynchronous circuitry and may be maintained in any state for an indefinite period of time.
See all Fujitsu Semiconductor Limited datasheets
| Part Number | Description |
|---|---|
| MB82B001 | 1M-BIT HIGH-SPEED BiCMOS SRAM |
| MB82B006 | 1M-BIT HIGH-SPEED BiCMOS SRAM |
| MB82B78 | 64K-BIT HIGH-SPEED BiCMOS SRAM |
| MB82B79 | 72K-BIT HIGH-SPEED BiCMOS SRAM |
| MB82B81 | 256K-BIT HIGH-SPEED BiCMOS SRAM |
| MB82B84 | CMOS 256K-BIT HIGH-SPEED BiCMOS SRAM |
| MB82B85 | 256K-BIT HIGH-SPEED BiCMOS SRAM |
| MB8264-15 | NMOS Dynamic Random Access Memory |
| MB8264-20 | NMOS Dynamic Random Access Memory |
| MB8264A | MOS Dynamic Random Access Memory |
