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MB82B78 - 64K-BIT HIGH-SPEED BiCMOS SRAM

General Description

Po" to A,.

Address input.

110, to 110.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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September 1990 Edition 1.0 DATA SHEET MB82B78-151-20 64K-BIT HIGH-SPEED BiGMOS SRAM OJ FUJITSU 8K Words x 8 Bits High-Speed Static Random Access Memory The Fujitsu MB82B78 is a static random access memory organized as 8,192 words x 8 b~sand fabricated with CMOS silicon gate process. BiCMOStechnology is used in the peripheral circuits 10 provide lower power dissipation and higher speed. To obtain a smaller chip size, the cells use NMOS transistors and resislors. The MB82B78 is housed in 300 mil plastic DIP and SOJ packages, and a450milplastic SOP package. The memory uses asynchronous circuitry and requires +5 V power supply. All pins are TTl compatible.