MB82B78 Datasheet | Fujitsu Semiconductor Limited

September 1990 Edition 1.0 DATA SHEET MB82B78-151-20 64K-BIT HIGH-SPEED Bi GMOS SRAM FUJITSU 8K Words x 8 Bits High-Speed Static Random Access Memory The Fujitsu MB82B78 is a static random access memory organized as 8,192 words x 8 b~sand fabricated with CMOS silicon gate process. Bi CMOStechnology is used in the peripheral circuits 10 provide lower power dissipation and higher speed. To obtain a smaller chip size, the cells use NMOS transistors and resislors. The MB82B78 is housed in 300 mil plastic DIP and SOJ packages, and a450milplastic SOP package. The memory uses asynchronous circuitry and requires +5 V power supply. All pins are TTl patible. The MB82B78 has low power dissipation, low cost, and high performance, and it is ideally suited for usa in microprocessor systems and other applications where fast access time and ease of use are required. - Organization: 8,192 words x 8 bits - Static operation: no clocks or timing strobe required - Access time: 1M - t ACS1 -15 ns max., W:sz - toe - 8 ns max (MB82B78-15) 1M - t ACS1 - 20 ns max., W:sz - toe - 10 ns max (MB82B78-20) - Single 5 V power supply ±1 0% tolerance with low current drain: 120 m A max. (Operating) 30 rn A max. (TTl Standby) 15 m A max. (CMOS Standby) - Bi CMOS peripheral circuits - TTl patible inputs and outputs - Three-state outputs - Electrostatic protection for all inputs and outputs - Standard 28-pin Plastic: Packages: Skinny DIP (300 mil) MB82B78-xx PSK SOP (450 mil) MB82B78-xx PF SOJ(300mil) MB82B78-xx PJ Absolute Maximum Ratings (See Note) Rating Symbol Value Unit Supply...