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MB82B78 Datasheet PDF

Fujitsu MB82B78

MB82B78 is a static random access memory organized as 8,192 words x 8 b~sand fabricated with CMOS silicon gate process. The MB82B78 is housed in 300 mil plastic DIP and SOJ packages, and a450milplastic SOP package. The memory uses asynchronous circuitry and requires +5 V power supply.
Part No. MB82B78
Datasheet MB82B78 Download
Manufacturer
Fujitsu
Description 64K-BIT HIGH-SPEED BiCMOS SRAM
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MB82B78 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(See Note) Rating Symbol Value Unit Supply Voltage Vee -0.510+7 V Input Volt:'ae on any pin with respectto NO V.., -3.510+7 V Output vo~e on any 110 pin with respect to G 0 VI'O -0.510+7 V Output Current lOUT ±20 mA Power Dissipation PD 1.0 W Temperature Under Bias TslAS -1010+85 °C Slorage Temperature Range Tsm --45 10 +125 °C Note: PermanentclaY1C8 damage may occur If absolu1ll maxll11U/n ratings are exceeded. Functional operation should be reslricted 10 1he conditions as detailed in the operation sections of this clala sheet Exposure to absolu1ll maximum rating condition. for exlanded periods may atlect device relabiUty. Plastic Package (DIP-2aNl04) Plastic Package (FPT -28P-II02) Plastic Package (LCC-28P-M04) PIn Assignment (TOP VIEW) NC ~ A. WE As CS. A. A. A., A, AA.. ~ OE A,. ~ A" CS, A,. 110. 110, 110, 1.0. 110. 110. 110. GND 110. ~'"© 11111ObrFWrrsULIlinetlllldFujIIoull-,1nc. 2-29 MB82B78-15 MB82B78-.20 As A, A. A. A. As As A, As As A,. A" A,. OE WE CS, CS_ Fig.
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