MB82B79 Datasheet | Fujitsu Semiconductor Limited

May 1990 Edition 1.0 DATA SHEET c O FUJITSU M882879-151-20 72K-BIT HIGH-SPEED Bi GMOS SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory The Fuj~su MB82B79 is a8, 192words x 9 b~ static random access memory fabricated w~h a CMOS silicon gate process. For lower power dissipation and higher speed, the peripheral circu~s use Bi CMOS technology. To obtain a smaller chip size, cells use NMOS transistors and resistors. The MB82B79 has 300 mil plastic DIP and SOJ packages, and a 450 mil SOP package. The memory uses asynchronous circuitry and requires a +5 V power supply. All pins are TTL patible. The MB82B79 has low power dissipation, low cost, and high performance, and it is ideally su~ed for use in microprocessor systems and other applications where fast access time and ease of use are required. - Organization: 8,192 words x 9 b~s - Static operation: no clocks or refresh required - Access time: t AA - t ACS1 - 15 ns max. 1ACS2 -toe = 8 ns max. (MB82B79- 15) 1M - t ACS1 - 20 ns max. IACS2 -toe - 10 ns max. (MB82B79-20) - Single +5 V power supply ±1 0"10 tolerance w~h low current drain: 120 m A max. (Active operation) 15 m A max. (Standby CMOS level) 30 m A max. (Standby TTL level) - Bi CMOS peripheral circuits - TTL patible inputs and outputs - Three-stale outputs - 28-pin Plastic Packages: Skinny DIP (300 mil) MB82B79-xx PSK (300 mil) MB82B79-xx PF (450 mil) MB82B79-xx PJ Absolute Maximum Ratings (See Note) Rating Symbol Value Unit Supply Voltage Input Volta&e on any pin w~h respect to ND Vee -{l.5 10...