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MB82B79 - 72K-BIT HIGH-SPEED BiCMOS SRAM

General Description

A.

to A,.

Address input.

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MB82B78 64K-BIT HIGH-SPEED BiCMOS SRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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May 1990 Edition 1.0 DATA SHEET cO FUJITSU M882879-151-20 72K-BIT HIGH-SPEED BiGMOS SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory The Fuj~su MB82B79 is a8, 192words x 9 b~ static random access memory fabricated w~h a CMOS silicon gate process. For lower power dissipation and higher speed, the peripheral circu~s use BiCMOS technology. To obtain a smaller chip size, cells use NMOS transistors and resistors. The MB82B79 has 300 mil plastic DIP and SOJ packages, and a 450 mil SOP package. The memory uses asynchronous circuitry and requires a +5 V power supply. All pins are TTL compatible.