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MB82B85 - 256K-BIT HIGH-SPEED BiCMOS SRAM

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September 1990 Edition 1.0 DATA SHEET cO FUJITSU MB82B85-151-20 256K-BIT HIGH-SPEED BiCMOS SRAM 64K Words x 4 Bits BICMOS High-Speed Static Random Access Memory With Automatic Power Down The Fujitsu MB82B85 is a static random access memory organized as 65,536 words by 4 bits and fabricated with a CMOS silicon gate process. BiCMOStechnology is used in the peripheral circuits to provide lower power dissipation and higher speed. To obtain a smaller chip size, the cells use NMOS transistors and resistors. The MB82B85 is housed in 300 mil plastic DIP and small outline J-lead (50.1) packages. The memory uses asynchronous circu~ry and requires +5 V power supply.