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BL2304 - N-Channel Power Mosfet

Key Features

  • Electrostatic Sensitive Devices.
  • VDS (V) = 30V.
  • ID = 2.6A.
  • RDS(ON) < 70mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) Pb Lead-free BL2304.

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Full PDF Text Transcription for BL2304 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BL2304. For precise diagrams, tables, and layout, please refer to the original PDF.

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Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 2.6A  RDS(ON) < 70mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) Pb Lead-free BL2304 APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL2304 2304 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a ±20 @ TA = 25 ℃ 2.6 @ TA = 70 ℃ 2.1 10 Power Dissipation 0.