Datasheet4U Logo Datasheet4U.com
Galaxy Microelectronics logo

BL2304 Datasheet

Manufacturer: Galaxy Microelectronics
BL2304 datasheet preview

Datasheet Details

Part number BL2304
Datasheet BL2304-GME.pdf
File Size 390.84 KB
Manufacturer Galaxy Microelectronics
Description N-Channel Power Mosfet
BL2304 page 2 BL2304 page 3

BL2304 Overview

Production specification N-Channel Enhancement Mode Field Effect Transistor.

BL2304 Key Features

  • Electrostatic Sensitive Devices
  • VDS (V) = 30V
  • ID = 2.6A
  • RDS(ON) < 70mΩ (VGS = 10V)
Galaxy Microelectronics logo - Manufacturer

More Datasheets from Galaxy Microelectronics

See all Galaxy Microelectronics datasheets

Part Number Description
BL2300 N-Channel Power Mosfet
BL2301 P-Channel Enhancement Mode Field Effect Transistor
BL2301W P-Channel Enhancement MOSFET
BL2302 N-Channel Enhancement Mode Field Effect Transistor
BL2303 P-Channel Power Mosfet
BL2305 P-Channel Power Mosfet
BL2306 N-Channel Power Mosfet
BL2308 N-Channel Power Mosfet
BL2311 P-Channel Power Mosfet
BL2312 N-Channel Power Mosfet

BL2304 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts