BL2304 Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor.
BL2304 Key Features
- Electrostatic Sensitive Devices
- VDS (V) = 30V
- ID = 2.6A
- RDS(ON) < 70mΩ (VGS = 10V)
| Part number | BL2304 |
|---|---|
| Datasheet | BL2304-GME.pdf |
| File Size | 390.84 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power Mosfet |
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Production specification N-Channel Enhancement Mode Field Effect Transistor.
See all Galaxy Microelectronics datasheets
| Part Number | Description |
|---|---|
| BL2300 | N-Channel Power Mosfet |
| BL2301 | P-Channel Enhancement Mode Field Effect Transistor |
| BL2301W | P-Channel Enhancement MOSFET |
| BL2302 | N-Channel Enhancement Mode Field Effect Transistor |
| BL2303 | P-Channel Power Mosfet |
| BL2305 | P-Channel Power Mosfet |
| BL2306 | N-Channel Power Mosfet |
| BL2308 | N-Channel Power Mosfet |
| BL2311 | P-Channel Power Mosfet |
| BL2312 | N-Channel Power Mosfet |