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TBL250P06-3DL8 - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Super low gate charge.
  • 100% EAS guaranteed.
  • Excellent CdV/dt effect decline.
  • Advanced high cell density Trench technology.
  • Halogen free.
  • Qualified to AEC-Q101 standards for high reliability Mechanical Data.
  • Case: PDFN3×3-8L.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number TBL250P06-3DL8 Package PDFN3×3-8L Shipp.

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Datasheet Details

Part number TBL250P06-3DL8
Manufacturer GME
File Size 404.53 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TBL250P06-3DL8 Datasheet
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Full PDF Text Transcription

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P-Channel Enhancement Mode MOSFET TBL250P06-3DL8 Features  Super low gate charge  100% EAS guaranteed  Excellent CdV/dt effect decline  Advanced high cell density Trench technology  Halogen free  Qualified to AEC-Q101 standards for high reliability Mechanical Data  Case: PDFN3×3-8L  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number TBL250P06-3DL8 Package PDFN3×3-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 250P06 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C) *1 Continuous Drain Current (TA = 70°C) *1 Pulsed Drain Current *2 A
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