TBL250P06-3DL8 Overview
P-Channel Enhancement Mode MOSFET TBL250P06-3DL8.
TBL250P06-3DL8 Key Features
- Super low gate charge
- 100% EAS guaranteed
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
- Halogen free
- Qualified to AEC-Q101 standards for high reliability
- Case: PDFN3×3-8L
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202
- 55 ~ +150 -55 ~ +150