Download TBL250P06-3DL8 Datasheet PDF
TBL250P06-3DL8 page 2
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TBL250P06-3DL8 Description

P-Channel Enhancement Mode MOSFET TBL250P06-3DL8.

TBL250P06-3DL8 Key Features

  • Super low gate charge
  • 100% EAS guaranteed
  • Excellent CdV/dt effect decline
  • Advanced high cell density Trench technology
  • Halogen free
  • Qualified to AEC-Q101 standards for high reliability
  • Case: PDFN3×3-8L
  • Molding pound: UL Flammability Classification Rating 94V-0
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202
  • 55 ~ +150 -55 ~ +150