• Part: TBL250P06-3DL8
  • Description: P-Channel Enhancement Mode MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 404.53 KB
Download TBL250P06-3DL8 Datasheet PDF
Galaxy Microelectronics
TBL250P06-3DL8
TBL250P06-3DL8 is P-Channel Enhancement Mode MOSFET manufactured by Galaxy Microelectronics.
P-Channel Enhancement Mode MOSFET TBL250P06-3DL8 Features - Super low gate charge - 100% EAS guaranteed - Excellent CdV/dt effect decline - Advanced high cell density Trench technology - Halogen free - Qualified to AEC-Q101 standards for high reliability Mechanical Data - Case: PDFN3×3-8L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number TBL250P06-3DL8 Package PDFN3×3-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 250P06 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage...